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© 2003-Present, John C. Bean |
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This is the first of two furnaces. In this furnace SiO2 layers are formed by cooking the silicon wafers, at temperatures as high as 1100°C, in an atmosphere containing O2 or H20. Wafers are loaded into a quartz wafer boat, and the boat moved into the furnace with a push rod. The bulk of the furnace is taken up by the heating coils. These are driven to the desired oxidation temperature using three closed-loop proportional-integral-differential (PID) controllers.
Move the mouse over labels on the left to see detailed descriptions of equipment.
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