We Can Figure This Out.org
Virtual Lab: Minilab Overview
University of Virginia
             
           
Spin dry
Buffered oxide etch
© 2003-Present, John C. Bean
 
Here the pattern in the photoresist is transferred to the underlying chip using Hydrofluoric acid (HF). The chip has a surface layer of SiO2. Where the SiO2 is not covered by the photoresist, the HF etches it away. The patterned SiO2 is then used to control where "dopant" impurities and metal will contact the silcon wafer below.

HF is highly corrosive (and attacks nerve fibers)! The wetbench is designed to eliminate contact with HF - but extreme care must nevertheless be taken!!



Move the mouse over labels on the left to see detailed descriptions of equipment.

 
Last Scene
 
Next Scene